师资队伍

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

吴燕庆

职称:研究员

研究所:微纳电子学研究所

研究领域:后摩尔器件,低维材料及异质结,柔性射频器件,神经形态器件

办公电话:86-10-6275 0735

电子邮件:yqwu@pku.edu.cn

个人主页:

教育科研经历

2009年 美国普度大学电子与计算机工程系博士,曾任IBM T.J Watson 研究中心研究员,华中科技大学教授。


主要研究方向

后摩尔器件,低维材料及异质结,柔性射频器件,神经形态器件


研究成果概况

长期从事后摩尔微纳器件,包括低维材料及异质结、柔性射频器件、光电器件、量子隧穿器件,功率器件与神经形态器件。共发表论文100余篇,包括Nature, Nature Nanotechnology, Nature Communications, Science Advances, Advanced Materials, Nano Letters, ACS Nano, Proceedings of the IEEE,IEEE Electron Device Letters以及国际电子器件会议IEDM等。论文总他引次数超过5000余次,h因子32。曾获2007年国际半导体器件研讨会最佳学生报告奖,2012年IBM专利申请发明成果奖。2013年IBM Research Pat Goldberg Memorial Best Paper Award in Computer Science, Electrical Engineering and Math奖。多次在国际会议上作邀请报告。


Selected Publications (*Corresponding Author)

1. X. Li, Z. Yu, X. Xiong, T. Li, T. Gao, R. Wang, R. Huang, and Y.Q. Wu*,High-Speed Black Phosphorus Field-Effect Transistors Approaching Ballistic Limit”, Science Advances. (In press)

2. T. Li , X. Li , M. Tian , Q. Hu , X. Wang , S. Li and Y.Q. Wu*, “Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructure”, Nanoscale, 11, 4701-4706, 2019

3. M. Tian, B. Hu, H. Yang, C. Tang, M. Wang, Q. Gao, X. Xiong, Z. Zhang, T. Li, X. Li, C. Gu, Y.Q. Wu*, “Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors”, Advanced Electronic Materials2019, 1800711

4. M. Wang, X. Li, X. Xiong, J. Song, C. Gu, D. Zhan, Q. Hu, S. Li and Y.Q. Wu*, “High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition”, IEEE Electron Device Letters 40, 3, 419-422, 2019

5. M. Tian, X. Li, Q. Gao, X. Xiong, Zhenfeng Zhang, Y.Q. Wu*, “Improvement of Conversion Loss of Resistive Mixers Using Bernal-stacked Bilayer Graphene”, IEEE Electron Device Letters 40, 325 – 328, 2019

6. S. Li, Q. Hu, X. Wang, T. Li, Xuefei Li, Y.Q. Wu*, “Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiOx as Gate Dielectric”, IEEE Electron Device Letters 40, 295 – 298, 2019

7. L. Liang, W. Li, S. Li, X. Li and Y.Q. Wu*, “Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric”, AIP Advances 8, 125314, 2018

8. Q. Gao, Z. Zhang, X. Xu, J. Song, X. Li and Y.Q. Wu*, “Scalable high performance radio frequency electronics based on large domain bilayer MoS2”, Nature Communications 9, 4778, 2018

9. Z. Zhang, X. Xu, J. Song, Q. Gao, S. Li, Q. Hu, X. Li, and Y.Q. Wu*, “High-performance transistors based on monolayer CVD MoS2 grown on molten glass”, Applied Physics Letters 113, 202103, 2018

10. X. Li, X. Xiong, T. Li, T. Gao, Y.Q. Wu*, “Optimized Transport of Black Phosphorus Top Gate Transistors using Alucone Dielectrics”, IEEE Electron Device Letters 39, 12, 1952 – 1955, 2018

11. Q. Hu, S. Li, T. Li, X. Wang, X. Li and Y.Q. Wu*, “Channel Engineering of Normally-Off AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-κ Dielectric”, IEEE Electron Device Letters 39, 9, 1377 – 1380, 2018

12. T. Li, M. Tian, S. Li, M. Huang, X. Xiong, Q. Hu, S. Li, X. Li, Y.Q. Wu*, “Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures”, Advanced Electronic Materials 4, 1800138, 2018

13. Y.Q. Wu*, “Multifunctional devices from asymmetry”, Nature Electronics 1, 331–332, 2018 (News & Views)

14. M. Tian, X. Li, T. Li, Q. Gao, X. Xiong, Q. Hu, M. Wang, X. Wang, and Y.Q. Wu*, “High Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies”, ACS Applied Materials Interfaces 10 (24), 20219–20224, 2018

15. T. Gao, X. Li, X. Xiong, M. Huang, T. Li, and Y.Q. Wu*, “Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors”, IEEE Electron Dev. Lett. 39, 5, 769 – 772, 2018

16. X. Xiong, X. Li, M. Huang, T. Li, T. Gao and Y.Q. Wu*, “High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric”, IEEE Electron Dev. Lett. 39, 1, 127 – 130, 2018

17. X. Li, T. Li, Z. Zhang, X. Xiong, S. Li and Y.Q. Wu*, “Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors”, IEEE Electron Dev. Lett. 39, 131-134, 2018

18. X. Li, R. Grassi, S. Li, T. Li, X. Xiong, T. Low*, and Y.Q. Wu*, “Anomalous temperature dependence in metal-black phosphorus contact”, Nano Lett., 18 (1), 26–31, 2018

19. X. Li, X. Xiong, T. Li, S. Li, Z. Zhang and Y.Q. Wu*, “Effect of Dielectric Interface on the Performance of MoS2 Transistors”, ACS Applied Materials & Interfaces, 9 (51), 44602–44608, 2017

20. M. Huang, S. Li, Z. Zhang, X. Xiong, X. Li and Y.Q. Wu*, “Multifunctional high-performance van der Waals heterostructures”, Nature Nanotechnology, Nature Nanotechnology 12, 1148–1154, 2017

21. Q. Gao, X. Li, M. Tian, X. Xiong, Z. Zhang and Y.Q. Wu*, "Short-Channel Graphene Mixer With High Linearity," IEEE Electron Device Letters, vol. 38, no. 8, pp. 1168-1171, Aug. 2017

22. T.Y. Li, Z. Zhang, X.F. Li, M.Q. Huang, S.C Li, S.M. Li, and Y.Q. Wu*, “High field transport of high performance black phosphorus transistors”, Appl. Phys. Lett. 110, 1635072017

23. X. Li, Y. Du, M. Si, L. Yang, S. Li, T. Li, X. Xiong, P. Ye and Y.Q. Wu*, “Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors”, Nanoscale, 8, 3572–3578, 2016

24. M. Huang, M. Wang, C. Chen, Z. Ma, X. Li, J. Han, and Y.Q. Wu*,“Broadband Black-Phosphorus Photodetectors with High Responsivity” Advanced Materials, Volume 28, Issue 18, Pages 3481–3485, May 11, 2016

25. S. Li, W. Luo, J. Gu, X. Cheng, P. D. Ye, and Y.Q. Wu*, “Large, tunable magnetoresistance in non-magnetic III-V nanowires” Nano Lett., 2015, 15 (12), pp 8026–8031 . November 13, 2015

26. X. Li, X. Lu, T. Li, W. Yang, J. Fang, G. Zhang, and Y.Q. Wu*, “Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride”, ACS Nano., 2015, 9 (11), pp 11382–11388, October 4, 2015

27. S. Zhu, J. Fang, K. Yao, and Y.Q. Wu*, “Nearly Perfect Spin Filter Based on a Wire of Half-Metallic (η5?C5H5)Ti(η8?C8H8)Ti Units”, Phys. Rev. Applied, 4, 014019 ,7 July 2015

28. X. Li, L. Yang, M. Si, S. Li, M. Huang, P. Ye, Y.Q. Wu*, “Performance Potential and Limit of MoS2 Transistors” Advanced Materials, Volume 27, Issue 9, pages 1547–1552, March 4, 2015

29. Wu, Y.Q*.Farmer, D.B. et al., “Graphene Electronics: Materials, Devices, and Circuits”, Proceedings of the IEEE (Invited), Vol. 101, No. 7, Pages 1620 – 1637, July 2013

30. Wu, Y.Q., Jenkins, K. A. et al., “State-of-the-art graphene high frequency electronics”, Nano Lett., 12 (6), pp 3062–3067, 2012

31. Wu, Y.Q.,* Perebeinos, V.* et al., “Quantum behavior of graphene transistors near the scaling limit” , Nano Lett., 12 (3), pp 1417–1423 2012

32. Wu, Y.Q.,* Farmer, D.B.* et al., “Three-Terminal Graphene Negative Differential Resistance Devices”, ACS Nano, 6 (3), pp 2610–2616 2012

33. Wu, Y.Q., Lin, Y.-M. et al., “High-frequency, scaled graphene transistors on diamond-like carbon” , Nature 472 (7341) 74-78 April 7 2011

34. Wu, Y.Q., Farmer, D.B. et al., “Record High RF Performance for Epitaxial Graphene Transistors (Late News),”, 2011 International Electron Devices Meeting (IEDM 2011), Washington DC , December 5-7, 2011

35. Wu, Y.Q., Lin, Y.-M. et al., “RF Performance of Short Channel Graphene Field-Effect Transistor (Late News),”, 2010 International Electron Devices Meeting (IEDM 2010), San Francisco , December 6-8, 2010

36. Wu, Y.Q., and Ye, P.D. “Scaling of InGaAs MOSFETs into deep-submicron”, ECS Transactions, vol. 28,no.5, pp 185-201, April 2010

37. Wu, Y.Q., Wang, R.S. et al., “First Experimental Demonstration of 100 nm Inversion-mode InGaAs FinFET through Damage-free Sidewall Etching”, 2009 International Electron Devices Meeting (IEDM 2009): Page 331-334, December 7-9, 2009

38. Wu, Y.Q., Xu, M. et al., “High-Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with Maximum Gm Exceeding 1.1 mS/?m:New HBr Pretreatment and Channel Engineering”, 2009 International Electron Devices Meeting (IEDM 2009): Page 323-326, December 7-9, 2009

39. Wu, Y.Q., Wang, W.K. et al., “0.8-V Supply Voltage Deep-Submicron Inversion-Mode In0.75Ga0.25As MOSFET” , IEEE Electron Device Letters 30 (7): 700-702 July 2009

40. Wu, Y.Q., Xu, M. et al., “Atomic-Layer-Deposited Al2O3/GaAs Metal-Oxide-Semiconductor-Field-Effect Transistor on Si substrates using Aspect Ratio Trapping technique”, Applied Physics Letters 93 (24), No. 242106 December. 17, 2008

41. Wu, Y.Q., Ye, P.D. et al., “Top-gated graphene field-effect-transistors formed by decomposition of SiC”, Applied Physics Letters 92 (9), No. 092102 March 3, 2008

42. Wu, Y.Q., Xuan, Y. et al., “Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect- transistors with atomic- layer-deposited Al2O3 dielectrics”, Applied Physics Letters 91 (2), No. 022108 July 11 2007

43. Wu, Y.Q., Shen, T. et al., “Photo-assisted capacitance-voltage characterization of high-quality atomic-layer deposited Al2O3/GaN MOS structures” Applied Physics Letters 90 (14), No. 143504 April 2 2007

44. Wu, Y.Q., Lin, H.C. et al., “Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs”, Applied Physics Letters 90 (7), No. 072105 FEB 2007

45. Wu, Y.Q., Ye, P.D. et al., “GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric”, Materials Science and Engineering B 135 (3): 282-284 DEC 15 2006